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ISSN:2394-3661 | Crossref DOI | SJIF: 5.138 | PIF: 3.854

International Journal of Engineering and Applied Sciences

(An ISO 9001:2008 Certified Online and Print Journal)

Physical Aspects of Negative Oxide Charge in p-MOS Capacitors with Annealed ITO Gates

( Volume 3 Issue 4,April 2016 ) OPEN ACCESS

Oleksandr Malik, F. Javier De la Hidalga-Wade


Properties of p-MOS capacitors with tin-doped indium oxide (ITO) gates have been investigated. The use of a transparent conducting gate is important for applications of p-MOS capacitors as optical sensors. A significant shift of the capacitance-voltage characteristics was observed, and this is explained as due to the presence of a negative oxide charge at the ITO-silicon dioxide interface. This negative charge comes from the presence of indium atoms that have diffused into the silicon dioxide.

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