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ISSN:2394-3661 | Crossref DOI | SJIF: 5.138 | PIF: 3.854

International Journal of Engineering and Applied Sciences

(An ISO 9001:2008 Certified Online and Print Journal)

Fabrication of TiO2 Doped ZnO UV Detector by Pulse Laser Deposition

( Volume 3 Issue 5,May 2016 ) OPEN ACCESS

Samar Y.AlDabagh, Kadhim.A.Aadim, Thura tariq abbas


In this work TiO2 doped with ZnO(5% , 7%)  thin films were  grown by pulse laser deposition technique on P-type (Si)substrate  at RT under vacuum 10-2 mbar. The properties of the photovoltaic detector with the increase of  ZnO concentration  is studied. All the films display photovoltaic in the near visible region. It was observed that the responsivity increased to 3.39 at  RT and to 3.82 after annealing  at 500 ºC with  the increase of ZnO concentrations from (5% to 7%).The Specific efficiency increases with the increase of ZnO concentration at  RT 10.9and after  annealing to 12.3.

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